Semiconductor friction undergoes electronic control

Electronic control of friction in silicon pn junctions.

A remarkable dependence of the friction force on carrier concentration was found on doped silicon substrates. The sample was a nearly intrinsic n-type Si(100) wafer patterned with 2-micrometer-wide stripes of highly B-doped p-type material. The counter surface was the tip of an atomic force microscope coated with conductive titanium nitride. The local carrier concentration was controlled throug...

Coherent optical control of electronic excitations in functionalized semiconductor nanostructures

The feasibility of creating and manipulating coherent quantum states on surfaces of functionalized semiconductor nanostructures is computationally investigated. Quantum dynamics simulations of electron-hole transfer between catechol molecules adsorbed on TiO2 -anatase nanostructures under cryogenic and vacuum conditions indicate that laser induced coherent excitations can be prepared and manipu...

Stretchable inorganic-semiconductor electronic systems.

Electronic properties of semiconductor nanowires.

This paper provides a review of the state-of-the-art electronic-structure calculations of semiconductor nanowires. Results obtained using empirical k.p, empirical tight-binding, semi-empirical pseudopotential, and with ab initio methods are compared. For conciseness, we will restrict our detailed discussions to free-standing plain and modulated nanowires. Connections to relevant experimental da...

Compositional mapping of semiconductor structures by friction force microscopy

Topographic and chemical mapping of materials at high resolution define the goals of a microscope. Force microscopy can provide methods for simultaneous topography and chemical characterization of materials. Here we describe the use of the atomic force microscope to map chemical variations of semiconductor samples. Chemical maps of semiconductor InP/InGaAs alloys have been determined with 3 nm ...